首页> 外文会议>Conference on Optical Switching and Optical Interconnection Nov 12-15, 2001, Beijing, China >Photon switch by Fano interference in a double quantum well structure
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Photon switch by Fano interference in a double quantum well structure

机译:双量子阱结构中受Fano干涉的光子开关

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In this paper, we demonstrate a weak photon switch by Fano interference in a double quantum well structure. GaAs/AlGaAs and InGaAs/AlAs heterostructures are taken as switch media to show that the weak switch can work at different wavelength by choosing materials and structures. We also estimate the order of the switch power and show that this photon switch by Fano interference in coupled double quantum well structures is a weak optical switch that can be used to realize one optical beam control another beam.
机译:在本文中,我们证明了在双量子阱结构中受Fano干扰的弱光子开关。以GaAs / AlGaAs和InGaAs / AlAs异质结构作为开关介质,表明通过选择材料和结构,弱开关可以在不同的波长下工作。我们还估计了开关功率的阶数,并证明了耦合双量子阱结构中受Fano干扰的光子开关是一种弱光开关,可用于实现一个光束控制另一光束的控制。

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