首页> 外文会议>Conference on Optical Microlithography XV Pt.2, Mar 5-8, 2002, Santa Clara, USA >ArF imaging with off axis illumination and sub-resolution assist bars: a compromise between mask constraints and lithographic process constraints
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ArF imaging with off axis illumination and sub-resolution assist bars: a compromise between mask constraints and lithographic process constraints

机译:具有离轴照明和亚分辨率辅助条的ArF成像:掩模约束条件与光刻工艺约束条件之间的折衷

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摘要

The insertion point for the first scattering bar is a key point in the development of a process using assist features, because this semi dense feature will determine the overall depth of focus of the process. A study of the parameters, which influence the choice of this insertion point, has been performed using a 0.63 NA 193nm scanner for a 100nm CD target after litho. The impact of the scattering bar on: Depth of Focus, Energy Latitude, Mask Error Enhancement Factor, printability, and the effect of scattering bar line width variation on main feature described by a parameter called AFMEEF will be discussed in this paper. The optimal insertion point for the first scattering bar will strongly depend on the litho-graphic process and the mask parameters. A model is proposed to determine the optimal insertion point, as function of the dose, focus budget, minimal allowed scatterbar width, and mask CD dispersion for both scattering bars and main features.
机译:第一散射条的插入点是使用辅助功能进行过程开发的关键点,因为该半密集特征将确定过程的整体焦点深度。对于光刻后使用100nm CD标靶的0.63 NA 193nm扫描仪,已经进行了影响该插入点选择的参数研究。本文将讨论散射条对以下方面的影响:聚焦深度,能量纬度,掩模误差增强因子,可印刷性以及散射条线宽变化对由称为AFMEEF的参数描述的主要特征的影响。第一散射条的最佳插入点将很大程度上取决于光刻工艺和掩模参数。提出了一个模型,用于确定最佳插入点,该函数取决于剂量,焦点预算,最小允许的散点图宽度以及散射条和主要特征的掩膜CD色散。

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