首页> 外文会议>Conference on Micro- and Nanoelectronics; 20031006-20031010; Zvenigorod; RU >Transition from quasi-hexagonal to quasi-one dimensional pores distribution during deep anodic etching of uniaxialle stressed silicon plate
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Transition from quasi-hexagonal to quasi-one dimensional pores distribution during deep anodic etching of uniaxialle stressed silicon plate

机译:单轴应力硅板深度阳极腐蚀过程中从准六边形到准一维孔分布的转变

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摘要

A gradual transition from quasi-hexagonal to quasi-one dimensional pore distribution during deep anodic etching of a uniaxially stressed silicon plate was experimentally observed to increase with mechanical loading.
机译:实验观察到在单轴应力硅片的深阳极腐蚀过程中,从准六边形到准一维孔分布逐渐过渡,随着机械载荷的增加而增加。

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