Investigation of a nucleation stage of macropore formation in p-type silicon

摘要

In the present paper the peculiarities of nucleation stage of deep anodic etching of silicon are studied. The dependence of the depth of etching crater obtained for silicon samples of p-type conduction with different resistivity upon the regimes of anodic etching processes has been determined. On the basis of the experimental results obtained the "bottleneck" effect observed both at the first and second stages of pore growth is explained.