Analysis of nitride-based quantum well LEDs and novel white LED design

摘要

Fundamental electrical and optical properties of strained wurtzite InGaN/GaN-based quantum well light emitting diodes are calculated based on the Rashba-Sheka-Pikus Hamiltonian in the vicinity of the Γ point. The theoretical results show an excellent correlation with experiments. A novel design of using AlInGaN as quantum barrier is proposed to realize efficient red emission, which is hard to achieve if GaN is used as barrier. To achieve high efficiency, the important factors relating to the oscillator strength are discussed in detail.