Optimisation of InGaAsP/InP buried heterostructure DFB lasers for 10Gbit/s operation up to 100℃

摘要

The optimisation of a 1300nm buried heterostructure (BH) InGaAsP/InP DFB laser for uncooled directly modulated 10Gbit/s operation is described. The development process as well as the key process parameters are discussed and results are presented on an optimised structure. Bandwidths in excess of 10GHz were measured at 90C chip base temperature. Clean open eye diagrams were recorded over the full temperature range, resulting in error free transmission over 40km. To our knowledge the results represent the current state of the art for uncooled BH DFB lasers operating at 1300nm.