Comprehensive Modeling of Semiconductor Lasers Including the Effect of Gain Saturation

摘要

Fabry-Perot laser diode models incorporating spectral hole burning and index non-linearity in a modified gain formulation are discussed. Modified rate equations based on the proposed modified gain formula are presented. Symbolically Defined Devices (SDD) implemented in a commercial simulator are constructed using modified rate equations. Simulated laser modulation response characteristics are obtained with the SDD implementation. Predicted modulation response curves obtained using the modified gain formulation correctly predict laser modulation characteristics for higher laser bias levels, in contrast to results obtained using conventional non-modified gain formulations.