The numericla simulation of photoelectric characteristic of three-channel bulk charge-coupled device in the region of X-ray

摘要

In this paper the photoelectric characteristics of the three-channel bulk charge-coupled device (BCCD) was simulated in the region of X-ray. The results show that the silicon three-channel BCCD can not work in the region of X-ray because of improper absorption coefficient of silicon. The absorption coefficient curve of a new material is given in this paper. By using the absorption coefficient of the new materil, three maxim positions of the spectral photosensitivity are obtained at 1.8kev; 1.2kev and 0.6kev, respectively.