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Integrated Isolators for Opto-Electro-Mechanical Systems and Devices

机译:光电机械系统和设备的集成隔离器

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The development of integrated isolators is critical to the functional integration of optics within OEM devices and systems. Bulk isolators have proven to be the most important components in many fiber optic systems due to their ability to protect light sources from back-reflected light. Such reflections are created at each component interface, inhomogeneity, or other perturbation in the path of the light. This paper reviews the operation of and current work in integrated isolators. Several methods for fabricating monolithically integrated magneto-optical isolators are discussed, including the fabrication of garnets, magnets, and cladding/buffer layers. Garnets are traditionally grown by liquid phase epitaxy (LPE) at temperatures and environments that are not friendly to semiconductors or other common substrates. More importantly, LPE requires epitaxial growth, which dictates garnet substrates and therefore hybrid integration techniques. We have used metallorganic chemical vapor deposition (MOCVD), sputtering, and metallorganic chemical liquid deposition (MOCLD) to deposit single-phase yttrium iron garnet (YIG). A variety of substrates were used, including MgO and SiO_2 which are promising buffer layer materials. The chemical, structural, and optical properties of the resulting films are discussed. We have also used a variety of sputtering techniques to integrate permanent magnet films with semiconductor processing. These magnets are sufficient for biasing the magneto-optical element. The chemical, structural and magnetic properties of these materials, as well as total integration will be discussed.
机译:集成隔离器的开发对于OEM设备和系统中光学功能的集成至关重要。散装隔离器已被证明是许多光纤系统中最重要的组件,因为它们具有保护光源免受背向反射光的能力。此类反射是在每个组件的界面,光的不均匀性或其他干扰处产生的。本文回顾了集成隔离器的操作和当前的工作。讨论了制造单片集成磁光隔离器的几种方法,包括石榴石,磁体和覆层/缓冲层的制造。石榴石传统上是通过液相外延(LPE)在对半导体或其他常见基材不友好的温度和环境下生长的。更重要的是,LPE需要外延生长,这决定了石榴石的基材,因此决定了混合集成技术。我们已经使用金属有机化学气相沉积(MOCVD),溅射和金属有机化学液体沉积(MOCLD)来沉积单相钇铁石榴石(YIG)。使用了多种基材,包括有希望的缓冲层材料的MgO和SiO_2。讨论了所得膜的化学,结构和光学性质。我们还使用了多种溅射技术将永磁体膜与半导体工艺集成在一起。这些磁体足以偏置磁光元件。将讨论这些材料的化学,结构和磁性,以及整体结合。

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