Feasibility Study of EUV Scanners

摘要

EUV lithography is a successor to DUV/VUV lithography, and is the final photon-based lithography technology. The concept of EUV scanners for 50nm node and below is considered by clarifying the similarities and differences between EUV scanners and DUV scanners. Illumination optics, projection optics, wafer alignment sensors and wafer focus sensors are examined. And the throughput model, overlay budget and focus budget are introduced. The concrete design of illumination optics and the requirements for sources are described. Numerical aperture, magnification and field size are discussed. EUV scanners for 50nm node and below are realized.