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Evaluation of Resist-Film Property by Scan and Spin Coating

机译:通过扫描和旋涂评估胶卷性能

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摘要

It is vital to control Critical Dimension (CD) within a wafer and pattern profile in photolithography process. We have previously reported our evaluation results with chemically amplified resists that one of the causes of pattern profile fluctuation is a change in resist film composition before exposure such as non-uniform distributions of additives (photo-acid generator (PAG), quencher) concentration and casting solvent etc.; and thus resist film property control is essential to suppress these factors. This is also true for thin resist film in finer line process and with top surface imaging. In the same paper, we have reported that a straightforward method to understand a change in film property is to check the amount of thickness loss by developing unexposed film after post apply bake (PAB). This method can be applied to thin film as well. We created unexposed films with the thickness range of 50-900nm by changing the total solid content (TSC) in resist and spin speed at resist coating. The amount of thickness loss significantly increased with sub-200nm thickness; the film property of which was quite different from that of 200nm-or-over thickness. Moreover, pattern line edge roughness (LER) as well as pattern surface roughness was prominent with 100nm-thick film even when we used a resist which has an ability to create good patterns on film with a thickness of 400nm. This is because the film quality diminishes in bulk below a certain thickness, while the property on the surface or interface layer predominates. Then we studied Scan coating to control thin film property. In Spin coating, chemical liquid dispensed on static wafer is spread by spinning the wafer and solvent is evaporated to form a film. On the other hand, in Scan coating, wafer remains static even after chemical liquid is dispensed and the wafer is dried under reduced pressure; which means the thinner evaporation rate is slower than that in Spin coating and film property control may be easier. We, therefore, expect that Scan coating is a possible method to control CD and pattern profile. In this study, we compared the process performance and film property of KrF resist films by Scan and Spin coatings and examined the film composition control.
机译:在光刻工艺中,控制晶片内的临界尺寸(CD)和图案轮廓至关重要。以前我们已经报告了使用化学放大型抗蚀剂的评估结果,图案轮廓波动的原因之一是曝光前抗蚀剂膜成分发生变化,例如添加剂(光酸产生剂(PAG),淬灭剂)浓度和铸造溶剂等;因此,控制抗蚀剂膜的性能对于抑制这些因素至关重要。对于细线工艺和顶面成像的抗蚀剂薄膜也是如此。在同一篇论文中,我们已经报道了一种了解薄膜性质变化的简单方法是通过在涂布后烘烤(PAB)后显影未曝光的薄膜来检查厚度损失量。该方法也可以应用于薄膜。通过更改抗蚀剂中的总固体含量(TSC)和抗蚀剂涂层的旋转速度,我们创建了厚度范围为50-900nm的未曝光膜。小于200nm的厚度,厚度损失的数量显着增加。其膜性质与200nm以上的厚度有很大的不同。另外,即使使用在膜厚400nm的膜上能够形成良好图案的抗蚀剂,图案厚度100nm的膜的图案线边缘粗糙度(LER)及图案表面粗糙度也显着。这是因为在一定厚度以下时,膜质量整体上下降,而在表面或界面层上的性能占主导。然后,我们研究了扫描镀膜以控制薄膜性能。在旋涂中,通过旋转晶圆分散分配在静态晶圆上的化学液体,并蒸发溶剂以形成薄膜。另一方面,在扫描涂布中,即使分配化学液体并在减压下干燥晶片,晶片仍保持静态。这意味着较薄的蒸发速率比旋涂中的蒸发速率更慢,并且薄膜性能控制可能更容易。因此,我们期望Scan涂层是控制CD和图案轮廓的一种可能方法。在这项研究中,我们通过扫描和旋涂比较了KrF抗蚀剂膜的工艺性能和膜性能,并检查了膜组成控制。

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