Outgassing of photoresists needs to be minimized to avoid contamination of optics. A new challenge for EUV photoresists - that was not encountered for previous lithography technologies - is that exposures will occur in a vacuum environment. In order to design resists that meet the Outgassing requirements for EUV lithography, current EUV photoresists need to be tested to determine if there are any performance gaps. In this paper we will describe the Outgassing set-up for the outgassing chamber at the University of Wisconsin, and document Intel's best known method for collecting and analyzing EUV outgassing data. In addition we will present preliminary outgassing results to benchmark the performance of Intel's outgassing procedure.
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