Micromachining of gallium nitride, sapphire and silicon carbide with ultrashort pulses

摘要

Controlled ablation of GaN, sapphire and SiC was investigated using both nanosecond and femtosecond laser pulses. Well-defined patterns of feature size ～10's of microns were successfully machined by fs pulses in all materials. Nanosecond (355nm) machining was primarily successful in machining GaN. Results for the different materials and pulse duration regimes are compared and contrasted.