Functional optical devices using vertical grooved DFB and DBR structures

摘要

Recent progress in dry etching technologies enabled realizations of ultra-fine-structures with superior verticality with a high aspect ratio. We applied a reactive-ion-etching (RIE) using CH_4/H_2 mixture gas to GaInAsP/InP compound which is widely used in photonic devices for wideband optical fiber communications, and realized new types of lasers for high performance operation, such as semiconductor/Benzocyclobutene (BCB) distributed Bragg reflector (DBR) lasers and vertical grating distributed feedback (VG-DFB) lasers consisting of vertical grating formed on the sidewalls of the stripe mesa. Furthermore for high output efficiency operation from the front facet, a distributed reflector (DR) laser consisting of the VG-DFB region integrated with the semiconductor/BCB DBR as the rear side reflector was realized. In this paper, we summarize present status and future prospects of these long wavelength lasers.