Network for Comput. Nanotechnol., Electr. Comput. Eng., Purdue Univ., West Lafayette, IN;
III-V semiconductors; effective mass; gallium arsenide; ground states; indium compounds; interface roughness; k.p calculations; light polarisation; luminescence; quantum confined Stark effect; red shift; semiconductor quantum dots; tight-binding calculations; InAs-GaAs; atomistic tight binding simulator NEMO 3-D; continuum methods; effective mass approximation; electric field; electronic structure; emission spectra; ground electron states; ground state optical transition; hole states; kldrp approximation; long range st;
机译:在(100)和(311)A GaAs衬底上生长的独立InAs / GaAs量子点中空穴状态的明显变化
机译:InAs / GaAs量子点中的量子约束斯塔克位移的理论研究
机译:InAs / GaAs量子点中的量子局限Stark位移的理论研究
机译:量子局限于100横向偏置INAS / GaAs量子点中的基态光学过渡率
机译:InAs / GaAs量子点太阳能电池和InAs纳米线在光伏器件中的应用的光学和机械研究。
机译:InAs-GaAs量子点的空间规则性:量化横向次序对生长速率的依赖性
机译:100横向偏置Inas / Gaas量子点中的量子限制斯塔克位移和基态光学跃迁速率