Impurity and isotope control of cubic and hexagonal boron nitride crystals under solution growth process

摘要

Some progresses in the synthesis of high purity hexagonal boron nitride BN (hBN) crystals were achieved by using Ba-BN as a growth solvent material at high pressure. The key issue to obtain high purity crystals is to reduce oxygen and carbon contamination in the growth circumstances. It is emphasized that hBN crystals exhibits superior properties as ultra violet light emitter as well as a substrate of graphene devices. While the current subject is to realize how the major impurities such as carbon and oxygen affect the properties of hBN and cBN, some progerss for the realization for the application of 2D's substrates and photonic materials have been achieved.