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Horn-Shaped Metal-Clad Modulator Coupled to InP Waveguide

机译:喇叭形金属包覆调制器耦合到InP波导

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We propose a compact horn-shaped metal-clad cavity modulator integrated on an InP waveguide, operating in $1.5-mu mathbf{m}$ wavelength range. Through 3D finite difference time-domain simulation, we show that the $oldsymbol{Q}$ factor of the resonant transmission dip can be enhanced drastically from 152 to 408 by introducing a horn-shaped SiO2 insulation layer to the cavity with an optimized slope angle. As a result, efficient modulation with the extinction ratio of 3.2 dB and insertion loss of 1.5 dB is obtained in a $2.3-mu mathbf{m}$-long modulator under a refractive index change of $Delta oldsymbol{n}=0.01$.
机译:我们提出了一种集成在InP波导上的紧凑型喇叭形金属包覆空腔调制器,可在 $ 1.5- \ mu \ mathbf { m} $ 波长范围。通过3D时域有限差分仿真,我们发现 $ \ boldsymbol {Q} $ 通过引入喇叭形SiO,可以将共振传输骤降的系数从152大幅度提高到408 2 绝缘层与腔体之间具有最佳的倾斜角度。结果,在光模块中获得了消光比为3.2 dB,插入损耗为1.5 dB的有效调制。 $ 2.3- \ mu \ mathbf { m} $ 折射率变化下的长调制器 $ \ Delta \ boldsymbol {n } = 0.01 $

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