Landau Levels (LLs) of ABA-stacked trilayer graphene (TLG) is highly sensitive to the applied transverse electric field ($E_{perp}$). The energy shifts of LLs can be probed by studying cyclotron resonance (CR) in graphene. Here we demonstrate electrical gate control of CR signals in TLG using dual-gated TLG device. Tuning $E_{perp}$ while keeping carrier density $n_{mathrm{e}}$ constant, we observed that the resonance magnetic field of CR signals in TLG were greatly dependent on $E_{perp}$. In addition, the experimental data shows transitions between monolayer graphene (MLG)-like LLs and a bilayer graphene (BLG)-like LLs originate from a mixing of those LLs, which is allowed only in the presence of $E_{perp}$. The position and its shift of each transition is well reproduced by numerical calculation using tight-binding model, indicating that our data directly reflects the $E_{perp}$ tunability of the band structure of TLG. ABA-stacked TLG has a great potential for future application as photovoltaic devices capable of external controlling of wavelength.
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机译:ABA堆积的三层石墨烯(TLG)的Landau能级(LLs)对施加的横向电场高度敏感(
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)。可以通过研究石墨烯中的回旋共振(CR)来探测LLs的能量转移。在这里,我们演示了使用双门TLG设备在TLG中对CR信号进行电门控制。调音
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同时保持载流子密度
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常数,我们观察到TLG中CR信号的共振磁场在很大程度上取决于
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。此外,实验数据显示,单层石墨烯(MLG)类LL和双层石墨烯(BLG)类LL之间的过渡源自这些LL的混合,只有在存在LL的情况下才允许混合
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。通过使用紧密绑定模型进行的数值计算,可以很好地复制每个过渡的位置及其移动,这表明我们的数据直接反映了
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TLG的能带结构的可调性。 ABA堆叠的TLG作为能够对波长进行外部控制的光伏器件,在未来的应用中具有巨大的潜力。
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