首页> 外文会议>China International Conference on High-Performance Ceramics;CICC; 20070510-13;20070510-13; Changsha(CN);Changsha(CN) >Effect of Tb Substitution on Electrical Characteristics and Microstructures of Bismuth Titanate Ceramics
【24h】

Effect of Tb Substitution on Electrical Characteristics and Microstructures of Bismuth Titanate Ceramics

机译:Tb替代对钛酸铋陶瓷陶瓷电学性能和微观结构的影响

获取原文
获取原文并翻译 | 示例

摘要

The electrical properties and Microstructures of Tb-doped bismuth titanate (Bi_(3.3)Tb_(0.6)Ti_3O_(12)) ceramic were investigated. XRD analyses revealed that the sample had Bi-layered perovskite structure. SEM micrographs showed randomly oriented and plate-like morphology. The remanent polarization (Pr) and coercive field (Ec) of Bi_(3.3)Tb_(0.6)Ti_3O_(12) ceramic are above 25 μC/cm~2 and 80 KV/cm, respectively.
机译:研究了掺Tb的钛酸铋(Bi_(3.3)Tb_(0.6)Ti_3O_(12))陶瓷的电学性能和微观结构。 XRD分析表明该样品具有双层钙钛矿结构。 SEM显微照片显示出随机取向和板状形态。 Bi_(3.3)Tb_(0.6)Ti_3O_(12)陶瓷的剩余极化率(Pr)和矫顽场(Ec)分别高于25μC/ cm〜2和80 KV / cm。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号