Micropatternable, Electrically Conducting Polyaniline Photoresist Blends For MEMS Applications.

摘要

We present preparation and electrical characterization of Polyaniline (PANi) SU8 micropatternable photoresist blend for MEMS applications. The blend was prepared by shear mixing of PANi and SU8-2010 at an rpm of 1000 for 15 hours. The composite was spin coated on a silicon wafer at an 850 rpm in order to achieve a thickness of 50um, followed by soft baking at 70 ℃ for 35 minutes and cooling to room temperature. The desired structures were patterned using masked UV exposure for 60 seconds. Full cross linking of PANi SU-8 blend was achieved by a post-exposure bake at a temperature of 90℃ for 25 minutes followed by cooling to room temperature. The desired electrode structures and trace lines were then developed in SU-8 developer (MicrochemTM) for 10 minutes by manual agitation. The fabricated structures were analyzed under SEM and Electron Dispersion X-ray Spectroscopy (EDS) demonstrating that an electrically conductive path is formed by PANI in SU-8 polymer matrix. It was also observed that resistivity of 4×10~3 Ω-m is achieved at 8.6 weight percentage of PANi in SU-8 polymer matrix.