Microstructural and Electrical Properties of 0.5 mol Al_2O_3-0.1 mol B_2O_3-doped ZnO Ceramics

摘要

Zinc oxide exhibits n-type semiconductivity that is caused by the deviations from stoichiometry. The electrical properties of ZnO can be enhanced by doping a trivalent dopant. It is also important to understand the effect of these dopants on the microstructure of ZnO ceramics. The conventional ceramic processing techniques were used to prepare un-doped and the 0.5 mol% Al_2O_3-0.1 mol% B_2O_3-doped ZnO ceramics. The samples were sintered at 1200-1400℃ for 1 and 3 hours. The microstructure of the samples was investigated by using a scanning electron microscope. The bulk density of the sintered samples was calculated from their weight and dimensions. According to the XRD results, the formation of ZnAl_2O_4 phase was confirmed in the samples of 0.5 mol% Al_2O_3-0.1 mol% B_2O_3-doped ZnO whereas the only ZnO phase was observed in the un-doped ZnO samples. The electrical resistance of the samples was measured at the room temperature.