Characteristic of nickel oxide microbolometer

摘要

Nickel oxide (NiO) film was formed on the SiO_2/Si substrate at the room temperature with water cooling system by reactive RF sputter. The feasibility of bolometric material was investigated, and a microbolometer using the NiO film was fabricated and evaluated. The NiO films were analyzed by using grazing-incidence X-ray diffraction (GIXRD). The NiO(111), NiO (200), and NiO (220) peaks expected as the main spectrum were dominantly appeared on the poly crystalline NiO films. The representative resistivity acquired at the O_2/(Ar+O_2) ratio of 10% sample was about 40.6 Ωcm. The resistivity of 40.6 Ωcm obtained in low oxygen partial pressure was inclined to reduce to 18.65 flcm according to the increase of the O_2/(Ar+O_2) ratio. The TCR value of fabricated microbolometer was - 1.67%/℃ at the NiO film resistivity of 40.6 flcm. The characteristics of fabricated NiO film and microbolometer were demonstrated by XRD patterns, TCR value, and SEM image.