首页> 外文会议>CAS'95 proceedings >ELECTRONIC PROCESSES IN BISMUTH TYPE DOPED SEMIMETALS

【24h】

ELECTRONIC PROCESSES IN BISMUTH TYPE DOPED SEMIMETALS

机译：铋型掺杂半胱氨酸的电子过程

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

Properties of high by doped of bismuth alloys with impurities of the VI group are investigated. Anomalous behaviour of statistical and kinetical characteristics dependence upon the impurity concentration is interpreted within the framework of a notion of impurity states in semimetal systems.

机译：研究了含VI族杂质的铋合金的高掺量特性。统计和动力学特性依赖于杂质浓度的异常行为在半金属系统中的杂质状态概念的框架内得到解释。

著录项

来源
《CAS'95 proceedings 》|1995年|407-410|共4页
会议地点 Sinaia(RO);Sinaia(RO)
作者
P.P. Bodiul; V.F. Garabazhiu; D.V. Gitsu;
展开▼
作者单位

Institute of Applied Physics, Moldova, Kishinau;

Institute of Applied Physics, Moldova, Kishinau;

Institute of Applied Physics, Moldova, Kishinau;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类半导体技术 ;
关键词

相似文献

外文文献
中文文献
专利

1. Mixed type I and type II superconductivity due to intrinsic electronic inhomogeneities in the type II Dirac semimetal PdTe2 [J] . Sirohi Anshu, Das Shekhar, Adhikary Priyo, Journal of Physics. Condensed Matter . 2019 ,第8期

机译：由于II型DIRAC半型PDTE2，混合I型和II型超导电性
2. Infrared Conductivity of Elemental Bismuth under Pressure: Evidence for an Avoided Lifshitz-Type Semimetal-Semiconductor Transition [J] . N. P. Armitage, Riccardo Tediosi, F. Levy, Physical review letters . 2010 ,第23期

机译：元素铋在压力下的红外电导率：避免的Lifshitz型半金属-半导体转变的证据
3. ~(121,123)Sb nuclear quadrupole resonance as a microscopic probe in the Te-doped correlated semimetal FeSb_2: Emergence of electronic Griffith phase, magnetism, and metallic behavior [J] . LA. A. Gippius, S. V. Zhurenko, R. Hu, Physical review. B, Condensed Matter And Materials Physics . 2018 ,第7期

机译：〜（121,123）Sb核四极共振，作为掺Te相关半金属FeSb_2中的微观探针：电子格里菲斯相，磁性和金属行为的出现
4. Electronic processes in bismuth type doped semimetals [C] . Bodiul, P.P., Garabazhiu, . 1995

机译：铋型掺杂半金属中的电子过程
5. Opto-electronic study of phosphorus-doped n-type and hydrogen-doped p-type CVD diamond films. [D] . Haenen, Ken. 2002

机译：磷掺杂的n型和氢掺杂的p型CVD金刚石薄膜的光电研究。
6. Electronic and Magnetic Properties of Lanthanum and Strontium Doped Bismuth Ferrite: A First-Principles Study [O] . Ayana Ghosh, Dennis P. Trujillo, Hongchul Choi, -1

机译：镧和锶掺杂的铋铁氧体的电子和磁性能：第一性原理研究
7. Infrared Conductivity of Elemental Bismuth under Pressure: Evidence for an Avoided Lifshitz-Type Semimetal-Semiconductor Transition [O] . Armitage, Peter, Tediosi, Riccardo, Levy, Florence, 2010

机译：元素铋在压力下的红外电导率：避免的Lifshitz型半金属-半导体转变的证据

ELECTRONIC PROCESSES IN BISMUTH TYPE DOPED SEMIMETALS

摘要

著录项

相似文献

相关主题

期刊订阅