PASSIVATION OF MONOATOMIC AND COMPOUND SEMICONDUCTORS BY GeO_xN_y FILM

摘要

C-v characteristics of Al/GeO_xN_y/GaAs(Ge) metal-insulator-semiconductor (MIS) structures have been measured in the frequency range of 1kHZ-1MHz.The density of the interface states was found to be as low as (5-8)×10~(10) cm~(-2) eV~(-1). There Is no evidence of Fermi level pinning, and surface carrier inversion is clearly demonstrated. The pyrolytic GeO_xN_y film is recommended for high quality GaAs and Ge MIS device fabrication.