Passivation of monoatomic and compound semiconductors by GeO/sub x/N/sub y/ film

摘要

C-V characteristics of Al/GeO/sub x/N/sub y//GaAs(Ge) metal-insulator-semiconductor (MIS) structures have been measured in the frequency range of 1 kHz-1 MHz. The density of the interface states was found to be as low as (5-8)/spl times/10/sup 10/ cm/sup -2/ eV/sup -1/. There is no evidence of Fermi level pinning, and surface carrier inversion is clearly demonstrated. The pyrolytic GeO/sub x/N/sub y/ film is recommended for high quality GaAs and Ge MIS device fabrication.