Dielectrophoretic chip with bulk Silicon electrodes

摘要

In this work we present the dielectrophoretic structure fabricated using two glass wafers and one 0.5 mm thick and highly conductive silicon wafer. In fabricated device the DEP force extends uniformly across the volume of the microfluidic device in the direction normal to the wafer plane. This is achieved by fabricating microfluidic channel walls from doped silicon so that they can also function as DEP electrodes. The advantages of the structure are: electrical leadouts that are free from the fluid leakage usually associated with the lead out recesses, a volume DEP force for deep chambers compared with the surface forces achieved by planar electrodes, no electrical dead volumes as encountered above the thin planar electrodes of alternative technologies, biocompatible silicon oxide passivated surfaces, and no electrochemical effects that arise from edge effects in multi-metal electrodes such as Ti/Au or Cr/Au.