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New laser slicing technology named KABRA process enables high speed and high efficiency SiC slicing

机译:名为KABRA工艺的新型激光切片技术可实现高速高效的SiC切片

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SiC is highly anticipated as the material to be used in the next generation of power devices. However, due to its high rigidity, it is difficult to process, has a low throughput in the wafer production process, and has a high cost. In order to solve these issues, we have developed the KABRA process - a new wafer-production process which uses laser processing technology - and have devised fully-automatic equipment called "KABRAIzen," which enables the mass production of SiC wafers. KABRAIzen achieves approximately twice the throughput and one-third the material loss of the conventional processes.
机译:SiC被期望用作下一代功率器件的材料。但是,由于刚性高,因此难以加工,晶片制造工序中的生产率低,成本高。为了解决这些问题,我们开发了KABRA工艺-一种使用激光加工技术的新晶片生产工艺-并设计了称为“ KABRAIzen”的全自动设备,该设备可以批量生产SiC晶片。 KABRAIzen的产量大约是传统工艺的两倍,而材料损失则是传统工艺的三分之一。

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