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Design, synthesis and ALD assessment of organometallic precursors for semiconductor applications

机译:用于半导体的有机金属前体的设计,合成和ALD评估

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摘要

As chip dimensions shrink, the delays in circuits are increasing in a dramatic manner. New challenges are thus arising in processes for scaling and integration, so as to obtain the required performances. This may also include the need of novel transistor architectures, such as FinFET or FD-SOI, at a change of semiconductor node, leading to new material needs. The new associated manufacturing challenges, especially the need to deposit more conformal metallic thin films, can be translated to new opportunities to introduce the usage of organometallic materials in electronic industry. Relevant precursors, reviewed in this paper, are available for ALD processing already, but there is still room for innovation to overcome downscaling challenges. The study of heteroleptic chemistries, e.g. involving the use of different ligands around the metal, is suggested to optimize advantageous physical properties and improved process features, compared to their homoleptic counterparts.
机译:随着芯片尺寸的缩小,电路中的延迟正以惊人的方式增加。因此,为了进行所需的性能扩展和集成的过程中出现了新的挑战。这可能还包括在更换半导体节点时需要新颖的晶体管架构(例如FinFET或FD-SOI),从而导致了新的材料需求。新的相关制造挑战,特别是需要沉积更多保形金属薄膜的需求,可以转化为在电子工业中引入有机金属材料使用的新机会。本文回顾过的相关前驱物已经可以用于ALD加工,但是仍然有创新的空间来克服缩小规模的挑战。杂化学研究,例如与同质的同类物相比,建议在金属周围使用不同的配体来优化有利的物理性能和改进的工艺特征。

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  • 来源
  • 会议地点 Cancun(MX)
  • 作者

    C. Dussarat;

  • 作者单位

    The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
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