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Mechanical/Structural Properties of ALD Zirconium Oxide (ZrO_2) Thin Films for High-Tech Applications

机译:高科技应用的ALD氧化锆(ZrO_2)薄膜的机械/结构性能

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摘要

Zirconium oxide (ZrO_2) films of varying thickness were deposited on p-type Si (100) substrates using Atomic layer deposition (ALD) with 200, 300, and 500, ALD cycles. The 300 ALD deposition cycle films were further annealed at 600 ℃. We tested these ZrO_2 films for structural and nanomechanical properties using nanoindentation and investigated the surface morphology by AFM. The structural and surface properties were explored using scanning field emission electron microscopy (FE-SEM) and atomic force microscopy (AFM). We discuss the influence of the deposition technique on the structure and properties of the ZrO_2 films resulting from ALD synthesis. The nanoindentation results indicate that the films become consistently softer as the number of ALD deposition cycles increase and the film thickness grows larger. Further annealing of the films slightly enhanced the hardness and fracture toughness of the films. The annealed ALD films depicted shorter radial cracks compared to the films under the same applied stress, which were not annealed in forming gas.
机译:使用具有200、300和500个ALD循环的原子层沉积(ALD),将厚度不同的氧化锆(ZrO_2)膜沉积在p型Si(100)衬底上。 300 ALD沉积循环膜在600℃进一步退火。我们使用纳米压痕测试了这些ZrO_2膜的结构和纳米机械性能,并通过原子力显微镜研究了其表面形态。使用扫描场发射电子显微镜(FE-SEM)和原子力显微镜(AFM)探索结构和表面性能。我们讨论了沉积技术对ALD合成产生的ZrO_2薄膜结构和性能的影响。纳米压痕结果表明,随着ALD沉积循环次数的增加和膜厚度的增大,膜将变得越来越柔软。膜的进一步退火稍微提高了膜的硬度和断裂韧性。与在相同施加应力下未在成型气体中退火的薄膜相比,退火的ALD薄膜显示出更短的径向裂纹。

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    Department of Mechanical and Aerospace Engineering, Old Dominion University, Norfolk, Virginia 23529, USA ,Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, Virginia 23529, USA;

    Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, Virginia 23529, USA ,Applied Research Center, Thomas Jefferson Lab, Newport News, Virginia 23606, USA;

    Department of Mechanical and Aerospace Engineering, Old Dominion University, Norfolk, Virginia 23529, USA ,Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, Virginia 23529, USA;

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