Simulation of Heat Extraction from Ga_2O_3 MOSFETs with an Integrated SiC Heat Sink

摘要

Wide-bandgap β-Ga2O3 has attracted considerable interest for power electronics, but its low thermalconductivity of less than 30 W/m·K limits the performance and reliability of Ga2O3 devices. A commonapproach to address self-heating in high power transistors involves integrating active device layers with athermally conductive foreign substrate for heat extraction. As a proof of concept, we performed electrothermalsimulations in this work to demonstrate the effectiveness of polycrystalline SiC (poly-SiC) as a heat sinkmaterial for reducing the channel temperature and improving the DC characteristics of Ga2O3 power devices.