Lasing characteristics of 1.5 m GaInAsP ridge laser diode on directly bonded InP/Si substrate

摘要

The increasing usage and the future demand for theSi-based photonic devices will enable a trend of high levelopto-electronic devices. we have established a new integrationmethod for the monolithic integration of InP opticaldevices on the Si substrate. By this new integration method,we could obtain lasing characteristics on the directly bondedInP/Si substrate. We have already demonstrated thesuccessful lasing operation of GaInAsP broad lasers onInP/Si substrate [1-2]. In this paper, we report the lasingcharacteristics of 1.5μm GaInAsP ridge laser diode on directlybonded InP/Si substrate.