Hemispheric Electroless Au Plated Nanogap over Pt Initial Electrodes

摘要

Nanogap electrodes with 3 nm in gap separation are the platform of sub-10 mm scale devices. We have established the fabrication method of electroless Au plating (ELGP) over Au nanogap electrodes by comommg with electron beam lithography [1,2]. The advantage of the ELGP process is a self-termination mechanism for controlling gap separation as 3 nm, a simultaneous mass-production at a yield of 90 %, and a robustness as the nanogap electrodes maintain their structure unchanged up to 170 °C. By using Au based ELGP nanogap electrodes, we have demonstrated logic circuit operation on SETs based on an Au nanoparticle and the nanogap electrodes with three input gate electrodes [3]. To realize room temperature operation of SETs, it is required to reduce the linewidth of the electrodes at the nanogap from 40 nm to sub-10 nm to improve gate capacitances.