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Perpendicular magnetic tunnel junction with strained Mn-based synthetic ferrimagnets

机译:具有应变的Mn基合成铁合金的垂直磁隧道结

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The Mn-based alloys have been attractive attention as electrode materials for perpendicular magnetic tunneljunctions (p-MTJ) in magneto-resistive random access memory (MRAM) . This is because their highperpendicular magnetic anisotropy (PMA) and small magnetization is beneficial to shrink MTJ size towardincreasing recording capacity over 16 Gbits. Recently we developed the growth technique of ultrathin MnGafilms and MnGa-based p-MTJs with high PMA, however maximum TMR ratio were still below 20%.One of the solution for achieving both high TMR ratio and low magnetization is to use synthetic ferrimagnetstructure with CoFe-based insertion layer. In this presentation we propose new synthetic ferrimagnetscomposed of strained MnGa and CoFe-based insertion layer. The stacking structure is MgO(sub.)/Cr(40)/CoGa(30)/MnGa(3)/CoGa(t_(CoGa)=0, 0.4)/Fe(0.4)/MgO(2.4).CoFeB(1)/Ta(3)/Ru(5) (thickness is in nm), whichwere grown at room temperature using an ultrahigh-vacuum sputtering system. The micro-fabrication ofdevices was performed by a conventional photolithography and Ar ion milling. The MTJs were annealed atoptimized temperature so as to obtain maximum TMR ratio. Figure 1 shows the room temperature TMRcurve of the MTJs with t_(CoGa)=0 and 0.4 nm. Here, the MTJs with t_(CoGa)=0 was not annealed because theannealing at the temperature over 200℃ decreased the TMR ratio. The shape of the TMR curve indicatedferromagnetic coupling between MnGa and Fe layer, as reported in the thick-MnGa/Fe bilayer. On theother hand, the inverted TMR curve was observed in the MTJs with t_(CoGa)=0.4 nm, implying that the MnGaand Fe layers coupled antiferromagentically. In addition, the TMR increased up to 33% with the annealingat 250℃. These results suggest that the ultrathinCoGa spacer between the MnGa and the Fe layersinduces the antiferromagnetic coupling forsynthetic ferrimagnet and increases the thermalendurance of the Mn-based MTJs.This work waspartially supported by the ImPACT program andKAKENHI (17K14103).
机译:Mn基合金作为磁阻随机存取存储器(MRAM)中的垂直磁性隧道结(p-MTJ)的电极材料已引起人们的关注。这是因为它们的高垂直磁各向异性(PMA)和较小的磁化强度有助于缩小MTJ尺寸,从而使记录容量超过16 Gbit。最近,我们开发了具有高PMA的超薄MnGa薄膜和MnGa基p-MTJ的生长技术,但是最大TMR比率仍低于20%。实现高TMR比率和低磁化的解决方案之一是使用具有CoFe的合成铁磁结构基于插入层。在此演示文稿中,我们提出了一种新的由应变MnGa和CoFe基插入层组成的合成Ferrimagnets。堆叠结构为MgO(sub。)/ Cr(40)/ CoGa(30)/ MnGa(3)/ CoGa(t_(CoGa)= 0,0.4)/ Fe(0.4)/ MgO(2.4).CoFeB(1 )/ Ta(3)/ Ru(5)(厚度以nm为单位),在室温下使用超高真空溅射系统生长。器件的微制造是通过常规的光刻和Ar离子铣削进行的。将MTJ退火至最高温度,以获得最大的TMR比。图1显示了t_(CoGa)= 0和0.4 nm的MTJ的室温TMR曲线。在此,t_(CoGa)= 0的MTJ不退火,因为在200℃以上的温度退火会降低TMR比。如在厚的MnGa / Fe双层中所报道的,TMR曲线的形状表明了MnGa和Fe层之间的铁磁耦合。另一方面,在t_(CoGa)= 0.4 nm的MTJ中观察到了相反的TMR曲线,这意味着MnGa和Fe层反铁磁耦合。另外,在250℃退火时,TMR增加了33%。这些结果表明,MnGa和Fe层之间的超薄CoGa隔离层诱导了合成铁氧体的反铁磁耦合并提高了Mn基MTJ的耐热性.ImPACT程序和KAKENHI(17K14103)部分支持了这项工作。

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    K. Z. Suzuki; S. Mizukami;

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    WPI Advanced Institute for Materials Research Tohoku University Sendai 980-8577 Japan Center for Spintronics Research Network Tohoku University Sendai 980-8577 Japan kazuya.suzuki.d8@tohoku.ac.jp;

    WPI Advanced Institute for Materials Research Tohoku University Sendai 980-8577 Japan Center for Spintronics Research Network Tohoku University Sendai 980-8577 Japan World Leading Research Center for Spintronics Tohoku University Sendai 980-8577 Japan;

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