Effect of lattice distortion on voltage-controlled magnetic anisotropy at MgO/CoFe interface

摘要

The voltage-controlled magnetic anisotropy (VCMA) effect is promising technology for realizing the ultra-low energy consumption for magnetization switching. Huge VCMA effect (>1000 fJ/Vm) is required for the voltage-induced magnetization switching in magnetic tunnel junction with 30 nm diameter and enough thermal stablility. Recently, the enhancement of VCMA by the lattice distortion is reported for the Pd/Co and CoFe thin films . In this work, we investigated the origin of the enhancement of VCMA by the lattice distrotion.