Manufacture of Mesa-Type and Air-Bridge Gate Ino.5Alo.5As/Ino.5Gao.5As Metamorphic High Electron Mobility Transistors (MHEMTs) with In_xAl_(1-x)As Graded Buffer Layers

摘要

The air-bridge- and mesa-type of Metamorphic High Electron Mobility Transistors (MHEMTs) with inverse step In_xAl_(1-x)As graded buffer layer were successfully manufactured and the kink-effect also discussed. For both types (air-bridge / mesa), the experimental (Idss), maximum transconductance (at V_(GS)=0 V, V_(DS)=2 V), gate-drain leakage current at V_(GD)=6 V, unit current gain cut-off frequency, and maximum oscillation frequency are of 335/325 (mA/mm), 325/370 (mS/mm), 8.5/15.5 (μA/mm), 17/14.5 (GHz), and 26.4/24 (GHz), respectively.