0.15 μm Power pHEMT Manufacturing Technology for Ka- and Q- Band MMIC Power Amplifiers

摘要

TriQuint Semiconductor, Texas has developed a very reproducible, high yield, and high reliability, 0.15 (ini power pHEMT technology with state-of-the-art power performance of MMIC Pas for Ka- to Q- band. Careful design of epitaxial structures and optimization of critical processing steps have achieved high performance and high yield. Using this technology, a compact 2W MMIC at 32-38 GHz (TGA4516, 4-mil), 3.5W MMIC at 35 GHz (TGA4517, 2-mil) and 2W MMIC at 45 GHz (TGA4046, 4 mil) have been designed and produced. In this paper, we report our fabrication process, device characteristics and MMIC RF performance at Ka- and Q- band.