首页> 外文会议>Annual International Conference on Compound Semiconductor MANufacturing TECHnology(CS MANTECH); 20050411-14; New Orleans,LA(US) >A Review of Night Imaging Technologies- Innovations for the Visible to Long Wave Infrared Systems
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A Review of Night Imaging Technologies- Innovations for the Visible to Long Wave Infrared Systems

机译:夜成像技术的回顾-长波红外可见系统的创新

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The history of night-imaging technologies can be divided into the categories of image intensifiers and solid state detectors. Image intensifiers amplify a visibleear-infrared image and subsequently convert this amplified signal into a visible screen image. The solid state sensors come in a variety of formats. The solid state design typically, but not always, has an active semiconductor layer that can absorb infrared radiation to generate electrons and holes. High-end 1R sensors are usually HgCdTe diodes, grown and processed as cither single or multiple band devices that operate at cryogenic temperatures. Other formats include uncooled bolometers, MSMs, PINs and APDs. This paper will focus on technologies that historically have been driven by Army needs: a brief overview of image intensifier (I~2) technology and HgCdTe solid state detectors.
机译:夜间成像技术的历史可以分为图像增强器和固态检测器的类别。图像增强器放大可见/近红外图像,然后将该放大的信号转换为可见的屏幕图像。固态传感器有多种格式。固态设计通常但并非总是具有一个有源半导体层,该有源半导体层可以吸收红外辐射以产生电子和空穴。高端1R传感器通常是HgCdTe二极管,作为在低温下工作的其他单波段或多波段设备进行生长和处理。其他格式包括未冷却的辐射热计,MSM,PIN和APD。本文将重点关注历史上一直受陆军需求驱动的技术:图像增强器(I〜2)技术和HgCdTe固态探测器的简要概述。

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