MECHANISMS AND MITIGATION OF SINGLE-EVENT EFFECTS

摘要

Physical mechanisms responsible for single-event effects are reviewed, concentrating on silicon MOS devices and digital integrated circuits. A brief historical overview of single-event effects in space and terrestrial systems is given. Single-event upset mechanisms in SRAMs are briefly described, as is the initiation of single-event latchup in CMOS structures. Techniques for mitigating single-event effects are described, including the impact of technology trends on mitigation efficacy. Future challenges are briefly explored.