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Supercritical CO_2 for High Resolution Photoresist Development

机译:超临界CO_2用于高分辨率光刻胶开发

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Today's conventional microelectronic fabrication processes are able to produce features in the 100nm range or lower. However, tighter regulation of toxic chemical release, as well as the increasing energy cost associated with treating rinse water, means that the semiconductor industry is primed for the adoption of alternative solvent processes. Supercritical CO_2 (scCO_2) is a promising candidate as a replacement solvent. It is inexpensive, environmentally benign, combines the best properties of both a gas and liquid and can be easily separated from solutes. We have recently shown scCO_2 to be a prime replacement solvent for photoresist development, and have formulated photoresists for both positive and negative tone development processes. We demonstrate the solubility of small non-polymeric, molecular glass compounds in supercritical CO_2. Molecular glasses form amorphous films on planar substrates and may show excellent solubility in scCO_2 without the incorporation of fluorine or silicon. Using a phenolic molecular glass, line-space features of 50 nm were developed in scCO_2.
机译:当今的常规微电子制造工艺能够产生100nm或更小范围的特征。然而,对有毒化学物质释放的更严格规定以及与冲洗水处理相关的能源成本的增加,意味着半导体行业已为采用替代溶剂工艺做好了准备。超临界CO_2(scCO_2)是有前途的候选替代溶剂。它价格低廉,对环境无害,结合了气体和液体的最佳性能,并且很容易与溶质分离。我们最近显示scCO_2是光致抗蚀剂显影的主要替代溶剂,并且已配制了用于正负显影工艺的光致抗蚀剂。我们证明了小型非聚合分子玻璃化合物在超临界CO_2中的溶解度。分子玻璃在平面基板上形成非晶膜,并且可以在scCO_2中显示出色的溶解度,而不会引入氟或硅。使用酚类分子玻璃,在scCO_2中开发了50 nm的线空间特征。

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