The influence of electron trap on photoelectron decay behavior in silver halide

摘要

Photoelectrons play an important role during the photographic process of silver halide. Electron traps influence the decay of photoelectrons and the photographic process as well. During the preparation of silver halide microcrystal, traps will be formed with different depth, concentration, and capture cross section under different conditions such as temperature, pressure, and nucleation time etc. The electron trap with different depth, concentration and capture cross section has different ability to capture photoelectrons. In this paper, the influences of the three parameters on photoelectron decay are theoretically analyzed from the point of the photoelectron decay kinetics, respectively. It is found that decay amount is determined by capture cross section; decay velocity depends on trap depth; trap concentration influences both decay amount and velocity. Photo-storage or imaging character of silver halide material can be changed and improved by changing the size of capture cross section, depth or concentration under certain condition to control decay amount or velocity.