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Role of Oxygen Atoms in Bonding Properties of Semiconducting Tungsten Trioxide

机译:氧原子在半导体三氧化钨结合性能中的作用

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We have computed the Mulliken's population (MP) to deduce charge transfer from W⇒O in semiconducting WO_3 using density functional theory (DFT) within pseudopotential scheme. In the DFT scheme, second order generalized gradient approximation for exchange and correlation has been implemented for the first time. The MP data show significant difference in charge transfer between W and six non-equivalent O atoms. In addition, the full potential linearized augmented plane wave method has been applied to compute the partial and total density of states. The MP data have also been explained in terms of partial DOS.
机译:我们使用伪势能方案中的密度泛函理论(DFT)计算了半导体的Mulliken族(MP),以推论出W⇒O在半导体WO_3中的电荷转移。在DFT方案中,第一次实现了用于交换和相关的二阶广义梯度近似。 MP数据显示W与六个非等价O原子之间的电荷转移存在显着差异。另外,全势线性化增强平面波方法已被用于计算状态的部分和总密度。 MP数据也已根据部分DOS进行了解释。

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