Synthesis and Characterization of Ferroelectric Thin Films by KrF Excimer Laser Ablation ofr Memory Applications

摘要

Pb(Zr_xTi_1-x)O_3 (lead zirconate titanate or PZT) ferroelectric thin film capactors are of considerable interest for the realization of memory devices such as nonvolatile random acces memories (NVRAMs). the PZT capacitors were prepared on platinized silicon Pt/(100)Si using conducting oxide La_xSr_1-xCoO_3 (lanthanum strontium cobalt oxide or LSCO) as electrodes. The PZT and LSCO thin films were deposited by the KrF excimer laser ablation technique. The optimum preparation conditions such as xygen pressure, laser energy influence and substrate temperature were ivnestigated. The PZT and LSCO filsm grown on Pt/(100)Si are polycrystalline. The crystallographic properties of the films were determiend using X-ray diffractometer (XRD) method. The electrical characterizations of the films including hysteresis loop, fatigue, and retention proeprties were determiend by the RT66A Standardized Ferroelectric Test System.