A Thin Silicon Wafer Thickness Measurement System by Optical Reflectmetry Scheme Using Fourier Transform Near-Infrared Spectrometer

摘要

In this study,measurable thickness range was improved by re-customized components of the thickness measurement system using the method of Fabry-Perot interference signature analyzing.A Fourier transform near infrared (FT-NIR) spectrometer with indium gallium arsenide was used in the developed system.As a result of the sensitiveness in the whole near infrared band and high spectral resolution united with high signal noise ratio of the FT-NIR spectrometer,the maximum measurable thickness is improved to 88μm while sub-micron order of the minimum measurable thickness is also improved.