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A study on statistical analysis of Si-wafer polishing process for the optimum polishing condition

机译:最佳抛光条件下硅晶圆抛光工艺的统计分析研究

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摘要

As the level of Si-wafer surface directly affects device line-width capability, process latitude, yield, and throughput in fabrication of microchips, it needs to have ultra precision surface and flatness. Polishing is one of the important processing having influence on the surface roughness in manufacturing of Si-wafers. The surface roughness in wafer polishing is mainly affected by the many process parameters. For decreasing the surface roughness, the control of polishing parameters is very important. In this paper, the optimum condition selection of ultra precision wafer polishing and the effect of polishing parameters on the surface roughness were evaluated by the statistical analysis of the process parameters.
机译:由于硅晶片表面的水平直接影响微芯片制造中的器件线宽能力,工艺范围,良率和产量,因此需要具有超精密的表面和平坦度。抛光是影响硅晶片制造中的表面粗糙度的重要处理之一。晶片抛光中的表面粗糙度主要受许多工艺参数的影响。为了降低表面粗糙度,抛光参数的控制非常重要。通过对工艺参数的统计分析,评价了超精密晶片抛光的最佳条件选择和抛光参数对表面粗糙度的影响。

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