首页> 外文会议>Advanced Semiconductor Manufacturing Conference, 2009. ASMC '09 >Tracking of design related defects hidden in the random defectivity in a production environment
【24h】

Tracking of design related defects hidden in the random defectivity in a production environment

机译:跟踪生产环境中随机缺陷中隐藏的与设计相关的缺陷

获取原文

摘要

For mature technologies, main yield detractor is random defectivity. Nevertheless, some devices present higher defectivity than rest of devices. Out of process accident, design related defect is one of suspected root cause. Also, design-based defect type is expected to increase as technology node decreases. Determining origin of these additional systematic defects is not easy as these defects are usually residual for technologies in production, not always predictable by OPC simulator (ex: void defect in active STI structure), and at least hidden by random defectivity after classical wafer inspection control. In this paper, an automatic flow to track systematic defects within global defectivity is presented. This flow starts with a relevant selection of several inspection defect files for a given layer. Then the Design Based Binning (DBB) tool performs a fine alignment of the whole multi inspection defect data set with design file. The resulting aligned defect file is treated by an efficient pattern matching algorithm to generate a design-based binning (DBB) defect file. The integration of this output defect file into a defect database allows easy defect analysis and statistical correlation to electrical results. An example of a suspected design-based defect analysis for a 90 nm node device is presented at the end of this paper.
机译:对于成熟技术,主要的产量下降因素是随机缺陷率。但是,某些设备的缺陷率要高于其余设备。在进行过程外事故时,与设计有关的缺陷是可疑的根本原因之一。同样,随着技术节点的减少,基于设计的缺陷类型有望增加。确定这些其他系统缺陷的来源并不容易,因为这些缺陷通常是生产技术中残留的,并非总是可以通过OPC仿真器预测的(例如:有源STI结构中的空缺陷),并且至少在经典晶圆检查控制后被随机缺陷隐藏。在本文中,提出了一种在全局缺陷范围内跟踪系统缺陷的自动流程。该流程从给定层的几个检查缺陷文件的相关选择开始。然后,基于设计的装箱(DBB)工具对整个多检查缺陷数据集与设计文件进行精确对齐。生成的对齐缺陷文件由有效的模式匹配算法处理,以生成基于设计的装箱(DBB)缺陷文件。将此输出缺陷文件集成到缺陷数据库中,可以轻松进行缺陷分析并与电气结果进行统计相关。本文末尾提供了一个可疑的基于设计的90 nm节点器件缺陷分析的示例。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号