Immersion Lithography Ready for 45 nm Manufacturing and Beyond

机译：浸没式光刻技术已准备好用于45 nm制造

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Enhanced resolution capability, defined in Rayleigh''s criterion as: R = (k

机译：增强的分辨率功能，在瑞利准则中定义为：R =（k

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来源
《Advanced Semiconductor Manufacturing Conference, 2007 IEEE/SEMI》|2007年|P.238-244|共7页
会议地点 StresaItaly
作者
Owa; S.; Nakano; K.; Nagasaka; H.; Fujiwara; T.; Matsuyama; T.; Ohmura; Y.; Magoona; H.;
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immersion lithography; integrated circuit manufacture; Rayleigh criterion; enhanced resolution capability; immersion defectivity; immersion fluids; immersion lithography; immersion scanners;

机译：浸没式光刻；集成电路制造；瑞利准则；增强的分辨率能力；浸没缺陷浸液；浸没式光刻；浸没式扫描仪;

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专利

1. Immersion lithography for 45nm manufacturing [J] . S. Owa, A. Hazelton, H. Magoon Microlithography world . 2007,第1期

机译：用于45nm制造的浸没式光刻
2. Simulation of the 45-nm half-pitch node with 193-nm immersion lithography-imaging interferometric lithography and dipole illumination [J] . Abani Biswas, Steven R. J. Brueck Journal of Microlithography, Microfabrication, and Microsystems. (JM3) . 2004,第1期

机译：用193nm浸没式光刻成像干涉光刻和偶极子照明对45nm半节距节点进行仿真
3. Simulation of the 45-nm half-pitch node with 193-nm immersion lithography-imaging interferometric lithography and dipole illumination [J] . Abani Biswas, Steven R. J. Brueck Journal of Microlithography, Microfabrication, and Microsystems. (JM3) . 2004,第1期

机译：用193nm浸没式光刻成像干涉光刻和偶极子照明对45nm半节距节点进行仿真
4. Immersion Lithography Ready for 45 nm Manufacturing and Beyond [C] . Owa, Soichi, Nakano, . 2007

机译：浸没式光刻技术已准备好用于45 nm生产
5. Ready or not: The experiences of elementary two-way immersion teachers. [D] . Dennis, Ayishah Dawn-Marie. 2016

机译：是否准备就绪：基础双向浸入式老师的经验。
6. Solvent immersion imprint lithography: A high-performance semi-automated procedure [O] . S. H. Nemati, D. A. Liyu, A. J. Canul, 2017

机译：溶剂浸渍压印光刻：高性能半自动程序
7. Water Immersion Optical Lithography for the 45nm Node [O] . Bruce W. Smith, Hoyoung Kang, Anatoly Bourov, 2013

机译：用于45nm节点的水浸光学光刻

Immersion Lithography Ready for 45 nm Manufacturing and Beyond

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