Novel Method to Characterize Post Laser Anneal Surface Condition for 45nm Process Technology Node

机译：表征45nm工艺技术节点激光后退火表面状态的新方法。

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

As IC technology advances result in progressively smaller device dimensions, understanding and characterizing the impact of process variations on wafer surface conditions and identifying potential surface damage becomes critical. UV laser scattering techn

机译：随着IC技术的发展，器件尺寸越来越小，了解和表征工艺变化对晶片表面状况的影响并确定潜在的表面损坏变得至关重要。紫外线激光散射技术

著录项

来源
《Advanced Semiconductor Manufacturing Conference, 2007 IEEE/SEMI》|2007年|P.61-68|共8页
会议地点 StresaItaly
作者
Teng; W.-Y.; Yeh; J.-H.; Chen; P.; Radovanovic; S.; Chen; D.K.; Cheng; H.; Mahajan; U.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类
关键词
integrated circuit technology; laser beam annealing; laser beams; process monitoring; IC technology; LSA; UV laser scattering technology; defect monitoring techniques; full-wafer surface monitoring; laser spike annealing process; process development; process monito;

机译：集成电路技术；激光束退火；激光束过程监控； IC技术； LSA；紫外线激光散射技术；缺陷监测技术；全晶片表面监测；激光尖峰退火工艺；工艺开发；过程监控;

相似文献

外文文献
中文文献
专利

1. Optimization of Post-processing Annealing Conditions of the Laser Powder Bed-Fused Ti-18Zr-14Nb Shape Memory Alloy: Structure and Functional Properties [J] . A. Kreitcberg, V. Sheremetyev, M. Tsaturyants, Shape memory and superelasticity . 2019,第2期

机译：激光粉末融合Ti-18ZR-14NB形状记忆合金的后处理退火条件的优化：结构和功能性
2. Analysis of USJ formation with combined RTA/laser annealing conditions for 28 nm high-k/metal gate CMOS technology using advanced TCAD for process and device simulation [J] . E.M. Bazizi, A. Zaka, F. Benistant Solid-State Electronics . 2013,第may期

机译：使用先进的TCAD对28 nm高k /金属栅CMOS技术的结合RTA /激光退火条件的USJ形成进行过程和器件仿真
3. Post Processing Methods used to Improve Surface Finish of Products which are Manufactured by Additive Manufacturing Technologies: A Review [J] . N. N. Kumbhar, A. V. Mulay Journal of The institution of engineers (India), Series C . 2018,第4期

机译：用于改善由添加剂制造技术制造的产品表面光洁度的后处理方法：综述
4. Novel Method to Characterize Post Laser Anneal Surface Condition for 45nm Process Technology Node [C] . Teng W.-Y., Yeh J.-H., Chen P., IEEE/SEMI Advanced Semiconductor Manufacturing Conference . 2007

机译：45nm工艺技术节点突出激光退火表面条件的新方法
5. LARGE NEAR-SURFACE ANOMALIES, SEISMIC REFLECTION DATA, AND SIMULATED ANNEALING (DATA PROCESSING, MONTE CARLO METHODS, NONLINEAR INVERSION, GLOBAL OPTIMIZATION). [D] . ROTHMAN, DANIEL HARRIS. 1986

机译：近表面异常，地震反射数据和模拟退火（数据处理，蒙特卡洛方法，非线性反演，全局优化）。
6. Influence of the Substrate Process Conditions andPostannealing Temperature on the Properties of ZnO Thin Films Grownby the Successive Ionic Layer Adsorption and Reaction Method [O] . BijoyChandra Ghos, Syed Farid Uddin Farhad, *, 2021

机译：基材工艺条件和生长ZnO薄膜性能的底蛋白温度通过连续的离子层吸附和反应方法
7. Post Processing Methods used to Improve Surface Finish of Products which are Manufactured by Additive Manufacturing Technologies: A Review [O] . N. N. Kumbhar, A. V. Mulay 2016

机译：用于改善由添加剂制造技术制造的产品表面光洁度的后处理方法：综述
8. Dynamical Model of Selective vs. Nonselective Laser-Stimulated Surface Processes. 2. Analytical Methods and Applications to Surface Rate Processes [R] . Lin, J., George, T. F. 1980

机译：选择性与非选择性激光刺激表面过程的动力学模型。 2.表面速率过程的分析方法和应用

Novel Method to Characterize Post Laser Anneal Surface Condition for 45nm Process Technology Node

摘要

著录项

相似文献

相关主题

期刊订阅