ETCHING COMPOSITION, IN PARTICULAR FOR SILICON MATERIALS, METHOD FOR CHARACTERIZING DEFECTS ON SURFACES OF SUCH MATERIALS AND PROCESS OF TREATING SUCH SURFACES WITH THE ETCHING COMPOSTION

摘要

The present invention relates to an etching composition, in particular, for silicon materials, a method for characterizing defects on surfaces of such materials and a process of treating such surfaces with the etching composition, wherein the etching composition comprises an organic oxidant dissolved in a solvent, and a deoxidant, wherein the deoxidant comprises HF or HBF₄ or mixtures thereof.