In-Situ Regrowth of GaAs Through Controlled Phase Transformations and Reactions of Thin Films on GaAs

摘要

In-situ depositions and reactions are utilized in the study of phase formation from solid phase reactions. We report on theformation of epitaxial GaAs and the formation of NiAs or Ni_2Ga_3 by the exposure of Ni_3GaAs to As_4 or Ga fluxes. In-situ annealing of Ni on MBE-grown GaAs leads to Ni_3GaAs, and subsequent reaction with As_4 or Ga drives regrowth of GaAs. The structures were analyzed by RBS, XRD, TEM, and in-situ electrical measurements.