Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China;
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China;
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China;
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China;
机译:通过化学氧化层的压入镍诱导结晶法制备的多晶硅TFT的改进的电性能和可靠性
机译:通过化学氧化层的压入镍诱导结晶法制造的多晶硅TFT的改进的电性能和可靠性
机译:使用压入式镍诱导的横向结晶制造的MILC多晶硅TFT的改进的电性能和均匀性
机译:通过F incormantation使用帽SiO_2使用驱动镍诱导的结晶(DIC)改善了MIC Poly-Si TFT的性能
机译:采用镍纳米粒子的镍镍稳定化氧化锆金属陶瓷阳极的电化学性能
机译:镍金属诱导的横向结晶结晶多晶硅膜的结构表征
机译:金属诱导的横向结晶硅膜改善连续波激光结晶TFT的均匀性和电性能